Part Number Hot Search : 
55M45 HT48C062 WSD451F 12R05 4545000 UGSP15D AAT3532 HZS2L
Product Description
Full Text Search
 

To Download Q62705-K38 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 Hall Sensor
KSY 10
Features * * * * * High sensitivity High operating temperature range High linearity Low offset voltage Low TC of sensitivity and internal resistance * Plastic-encapsulated miniature package Typical applications * Detection of speed * Detection of position * Detection of diaphragm position in pressure pickup cans * Magnetic field measurement at permanent magnets * Magnetic field measurement at magnetic yokes for current determination * Magnetic field measurement in dc motors for contactless commutation
Dimensions in mm
Type KSY 10
Ordering Code Q62705-K38
The position sensor KSY 10 is an ion-implanted Hall generator made of mono-crystalline GaAs material. It is enclosed in a tubular plastic package with four tags. When operating the sensor with a constant supply current, the output Hall voltage is directly proportional to the magnetic field acting upon the sensor. This sensor is outstanding for its high inductive sensitivity and very low temperature coefficient.
Semiconductor Group
1
07.96
KSY 10
The Hall sensor's active area is approx. 0.2 mm x 0.2 mm. It is placed approx. 0.35 mm below the plastic surface of the front side and is concentric towards the adjusting marking on the rear. The chip carrier is non-magnetic. The position sensor KSY 10 is particularly suitable for sensing the position of magnets and of softmagnetic material, resp., if the sensor itself is mounted on a magnet. Maximum ratings Parameter Operating temperature Storage temperature Supply current Thermal conductivity1) Characteristics (TA = 25 C) Nominal supply current Open-circuit sensitivity Open-circuit Hall voltage Symbol Value - 40 / + 150 - 50 / + 160 7 2.8 Unit C C mA mW/K
TA Tstg I1 Gth A
I1N KB0 V20 VR0 FL
5 170...230 85...130 25
mA V/AT mV mV
I1 = I1N, B = 0.1 T
Ohmic offset voltage2) I1 = I1N, B = 0 T Linearity of Hall voltage B = 0...0.5 T B = 0...1 T Supply and Hall-side internal resistance B=0 T Temperature coefficient of the open-circuit Hall voltage I1 = I1N, B = 0.2 T Temperature coefficient of the internal resistance B = 0.2 T
0.2 0.7 900...1200 approx. -0.05
% % %/K
R10, 20 TCV20
TCR10, R20
0.1 ... 0.18
%/K
1) Thermal conductivity chip-ambient when soldered, in still air 2) Offset voltage selection upon request
Semiconductor Group
2
KSY 10
Open-circuit sensitivity KB0 versus temperature referred to KB0 at TA = 25 C
Internal resistance R20 versus temperature referred to R20 at TA = 25 C, Parameter: Flux density B
Internal resistance R20 versus magnetic field referred to R20 at B = 0 T and TA = 25 C
Max. permissible supply current I1 versus temperature TA
Semiconductor Group
3


▲Up To Search▲   

 
Price & Availability of Q62705-K38

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X